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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
March 2005
HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
* 13A, 1200V, TC = 25C * 1200V Switching SOA Capability * Typical Fall Time 360ns at TJ = 150C * Short Circuit Rating * Low Conduction Loss * Avalanche Rated * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.fairchildsemi.com * Related Literature * TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Description
The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49313
Ordering Informations
Part Number
HGTP2N120CN HGT1S2N120CN
Package
TO-220AB TO-262
Brand
2N120CN 2N120CN
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
COLLECTOR (FLANGE)
E
C C G E C G G TO-262 E
COLLECTOR (FLANGE) TO-220
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2005 Fairchild Semiconductor Corporation
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HGTP2N120CN, HGT1S2N120CN Rev. C
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Absolute Maximum Ratings
Symbol
BVCES IC25 IC110 ICM VGES VGEM SSOA PD EAV tJ, TSTG TL TPKG tSC
TC = 25C, Unless Otherwise Specified
Parameter
Collector to Emitter Voltage Collector Current Continuous At TC = 25C At TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching SOA Operating Area at TJ = 150C (Figure 2) Power Dissipation Total at TC = 25C Power Dissipation Derating TC > 25C Forward Voltage Avalanche Energy (Note 2) Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, see Tech Brief 334 Short Circuit Withstand Time (Note 3) at VGE = 15V
HGTP2N120CN HGT1S2N120CN
1200 13 7 20 20 30 13A at 1200V 104 0.83 18 -55 to 150 300 260 8
Units
V A A A V V W W/C mJ C C C s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Notes: 1. Pulse width limited by maximum junction temperature. 2. ICE = 3A, L = 4mH 3. VCE(PK) = 840V, TJ = 125C, RG = 51.
Electrical Characteristics
Symbol
BVCES BVECS ICES
TC = 25C unless otherwise noted
Parameter
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Test Conditions
IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TJ = 25C TJ = 125C TJ = 150C
Min.
1200 15 6.4 13 -
Typ.
100 2.05 2.75 6.7 10.2 30 36
Max. Units
100 1.0 2.40 3.50 250 36 43 V V A A mA V V V nA A V nC nC
VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON)
Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 2.6A, VGE = 15V
TJ = 25C TJ = 150C
IC = 45A, VCE = VGE VGE = 20V TJ = 150C, RG = 51, VGE = 15V L = 5mH, VCE(PK) = 1200V IC = 2.6A, VCE = 600V IC = 2.6A, VCE = 600V VGE = 15V VGE = 20V
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Electrical Characteristics
Symbol
td(ON)l trl td(OFF)l tfl EON1 EON2 EOFF td(ON)l trl td(OFF)l tfl EON1 EON2 EOFF RJC
Notes:
TC = 25C unless otherwise noted (Continued)
Parameter
Current Trun-On Delay Time Current Rise Time Curent Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Curent Turn-On Delay Time Current Rise Time Curent Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Thermal Resistance Junction to Case
Test Conditions
IGBT and Diode at TJ = 25C ICE = 2.6A VCE = 960V VGE = 15V RG = 51 L = 5mH Test Circuit (Figure 18)
Min.
-
Typ.
25 11 205 260 96 425 355 21 11 225 360 96 800 530 -
Max. Units
30 15 220 320 590 390 25 15 240 420 1100 580 1.20 ns ns ns ns J J J ns ns ns ns J J J C/W
IGBT and Diode at TJ = 150C ICE = 2.6A VCE = 960V VGE = 15V RG = 51 L = 5mH Test Circuit (Figure 18)
-
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Typical Performance Characteristics
Figure 1. DC Collector Current vs Case Temperature
14 ICE , DC COLLECTOR CURRENT (A) VGE = 15V 12 10 8 6 4 2 0
Figure 2. Minimum Switching Safe Operating Area
ICE, COLLECTOR TO EMITTER CURRENT (A) 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
25
50
75
100
o
125
150
TC , CASE TEMPERATURE ( C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to Emitter Currentl
200 fMAX, OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 51, VGE = 15V, L = 5mH TC = 75oC,VGE = 15V IDEAL DIODE
Figure 4. Short Circuit Withstand Time
tSC , SHORT CIRCUIT WITHSTAND TIME (s) 50 VCE = 840V, RG = 51, TJ = 125oC 40 40 50
TC
VGE
100
75oC 15V 75oC 12V
50
30
30
20 ISC 10 tSC
20
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 1.2oC/W, SEE NOTES 1
TC VGE 110oC 15V o 110 C 12V 5
10
2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A)
0 10
11
12
13
14
15
0
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
ICE , COLLECTOR TO EMITTER CURRENT (A) 10
Figure 6. Collector to Emitter On-State Voltage
ICE, COLLECTOR TO EMITTER CURRENT (A) 10 DUTY CYCLE <0.5%, VGE = 15V 250s PULSE TEST 8 TC = -55oC TC = 25oC
8 TC = 25oC 6 TC = -55oC 4 TC = 150oC 2 DUTY CYCLE <0.5%, VGE = 12V 250S PULSE TEST 0 0 1 2 3 4 5 6
6 TC = 150oC 4
2
0
0
1
2
3
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
HGTP2N120CN, HGT1S2N120CN Rev. C
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ISC , PEAK SHORT CIRCUIT CURRENT (A) 5
HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
2000 EON2 , TURN-ON ENERGY LOSS (J) RG = 51, L = 5mH, VCE = 960V 1500
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
900 EOFF, TURN-OFF ENERGY LOSS (J) 800 700 600 500 400 300 200 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 25oC, VGE = 12V OR 15V RG = 51, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V, VGE = 15V
TJ = 150oC, VGE = 12V OR 15V
1000
500 TJ = 25oC, VGE = 12V, VGE = 15V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn_On Delay Time vs Collector to Emitter Current
45 tdI , TURN-ON DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 40 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
40 35 trI , RISE TIME (ns) 30 25 20 15 10 5 0 1.0 1.5 2.0 TJ = 25oC, TJ = 150oC, VGE = 15V RG = 51, L = 5mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 12V
2.5
3.0
3.5
4.0
4.5
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 350
Figure 12. Fall Time vs Collector to Emitter Current
700 RG = 51, L = 5mH, VCE = 960V 600 tfI , FALL TIME (ns)
VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 150 VGE = 12V, VGE = 15V, TJ = 25oC 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
500 400 300 200
TJ = 150oC, VGE = 12V OR 15V
TJ = 25oC, VGE = 12V OR 15V 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Typical Performance Characteristics
Figure 13. Transfer Characteristic
ICE , COLLECTOR TO EMITTER CURRENT (A) 40 35 30 25 20 15 10 5 0 7 TC = 25 C 8 9
o
(Continued)
Figure 14. Gate Charage Waveforms
16 VGE, GATE TO EMITTER VOLTAGE (V) IG(REF) = 1mA, RL = 260, TC = 25oC VCE = 1200V
DUTY CYCLE <0.5%, VCE = 20V 250S PULSE TEST
14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VCE = 400V VCE = 800V
TC = -55oC
TC = 150oC 10 11 12 13 14 15
VGE , GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 15. Capacitance vs Collector to Emitter
2.0 FREQUENCY = 1MHz C, CAPACITANCE (nF) 1.5 CIES 1.0
Figure 16. Collector to Emitter On-Sate Voltage
ICE, COLLECTOR TO EMITTER CURRENT (A) 5 DUTY CYCLE <0.5%, TC = 110oC 250s PULSE TEST
4 VGE = 15V 3 VGE = 10V 2
0.5
COES CRES 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
1
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Normalized Transient Thermal Response, Junction to Case
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 10-5 PD t2 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Test Circuit and Waveforms
(Continued)
Figure 18. Inductive Switching Test Circuit
RHRD4120
Figure 19. Switching Test Waveforms
90% VGE EOFF VCE + 90% VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I 10% EON2
L = 5mH RG = 51
-
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x V CE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
HGTP2N120CN, HGT1S2N120CN Rev. C
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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT
TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
9 HGTP2N120CN, HGT1S2N120CN Rev. C
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